藤浪眞紀 業績リスト
平成20年4月30日現在
研究論文（審査あり）
(1) M.
Fujinami, Y. Ujihira, “Chemical state analysis of corrosion products on
a steel by exposing it in SO2(0.16 vol%) environment by means of
conversion electron Mössbauer spectrometry”, Applications of Surface Science,
17, 265-275, (1984).
(2) M.
Fujinami, Y. Ujihira, “Chemical state analysis of corrosion products on
a steel in H2S-N2 andd H2S-O2-N2
environment by means of conversion electron Mössbauer spectrometry”,
Applications of Surface Science, 17, 276-284, (1984).
(3) M.
Fujinami, Y. Ujihira, “Conversion electron Mössbauer spectrometry (CEMS)
studies on α-and γ-Fe203 gas sensors”, Journal of
Materials Science, 20, 1859-1863, (1985).
(4) M.
Fujinami, K. Yoshida, Y. Ujihira, M. Terasaka, “57Fe and 119Sn
conversion electron Mössbauer studies of Fe-Sn phases on tinplate”, Journal
of Materials Science, 20, 4099-4102, (1985).
(5) M.
Fujinami, Y. Ujihira, “Transmission and conversion electron Mössbauer
studies of the crystallization transformation in the quaternary amorphous Fe80.5B12Si4.5+xC3-X(x=0,2)
ribbons”, Journal of Non-Crystalline Solids, 69, 361-369, (1985).
(6) M.
Fujinami, Y. Ujihira, “Mössbauer study on surface crystallization
behavior of amorphous Fe90Zr10 alloy ribbon”,
Hyperfine Interactions, 27, 301-304, (1986).
(7) M.
Fujinami, Y. Ujihira, “Application of conversion electron Mössbauer
spectrometry to the study of reactive sputtered iron oxide films”,
Hyperfine Interactions, 29, 1475-1478, (1986).
(8) M.
Fujinami, Y. Ujihira, “In situ conversion electron Mössbauer
spectrometry applied to the study of the corrosion products formed in solution”,
Hyperfine Interactions, 29, 1479-482, (1986).
(9) M.
Fujinami, Y. Ujihira, E. Richter, “メスバウアースペクトロメトリーによる鉄ーホウ素非晶質合金の構造と結晶化の解析”, 分析化学, 35, 742-747, (1986).
(10) M.
Fujinami, Y. Ujihira, “Mössbauer study on crystallization transformation
in amorphous Fe90Zr10 alloy ribbon”, Journal of
Applied Physics, 59, 2387-2391, (1986).
(11) E.
Kuzmann, A. Vertes, Y. Ujihira, M. Fujinami, P. Kovacs, S. Nagy, T. Masumoto, “Mössbauer
study of Fe-Zr hydrogenated at different cathodic potentials”, Hyperfine
Interactions, 42, 939-942, (1988).
(12) M.
Fujinami, Y. Ujihira, “57Fe conversion electron Mössbauer
spectrometric study of boron and carbon ion implanted irons”, Hyperfine
Interactions, 42, 985-988, (1988).
(13) M.
Fujinami, Y. Hashiguchi, H. Hamada, T. Ohtsubo, “Relation between Cu L
X-ray and Cu 2p photoelectron in YBa2Cu30x”,
Japanese Journal of Applied Physics, 28, L1959-L1962, (1989).
(14) J.
Kawai, Y. Nihei, M. Fujinami, Y. Higashi, S. Fukushima, Y. Gohshi, “Charge
transfer effects on the chemical shift and the line width of the CuKa X-ray
fluorescence spectra of copper oxides”, Solid State
Communications, 70, 567-571, (1989).
(15) M.
Tanaka, T. Takahashi, H. Katayama-Yoshida, S. Yamazaki, M. Fujinami, Y.
Okabe, W. Mizutani, M. Ono, K. kajimura, “Evidence for non-metallic nature
of the BiO plane in Bi2CaSr2Cu208
from scanning tunneling spectroscopy”, Nature, 339, 691-693, (1989).
(16) M.
Tanaka, S. Yamazaki, M. Fujinami, T. Takahashi, H. Katayama-Yishida, W.
Mizutani, K. Kajimura, M. Ono, “Surface electronic properties on BiO plane
of Bi2Sr2CaCu208 single crystal
measured by scanning tunneling microscopy”, Journal of Vacuum Science &
Technology A, 8, 475-478, (1990).
(17) M.
Fujinami, Y. Hashiguchi, T. Yamamoto, “Crystalline transformations in
amorphous Fe73.5Cu1Nb3Si16.5B6
alloy”, Japanese Journal of Applied Physics, 29, L477-L480, (1990).
(18) S.
Yamazaki, M. Tanaka, S. Tanaka, M. Fujinami, R. Uemori, D. Fujita, T.
Homma, M. Ono, “Atomic images and defect structures of the epitaxially
precipitated carbon layers on Ni(111) surface”, Journal of Vacuum Science
& Technology B, 9, 883-885, (1991).
(19) J.
Kawai, M. Takami, M. Fujinami, Y. Hashiguchi, S. Hayakawa, Y. Gohshi, “A
numerical simulation of total reflection X-ray photoelectron spectroscopy
(TRXPS)”, Spectrochimica Act, 47B, 983-991, (1992).
(20) 藤浪真紀, “新日本製鐵のエネルギー可変陽電子表面分析装置”, 放射線, 18,
55-61, (1992).
(21) J.
Kawai, S. Hayakawa, S. Suzuki, Y. Kitajima, Y. Tanaka, T. Urai, K. Maeda, M.
Fujinami, Y. Hashiguchi, Y. Gohshi, “Sample current at the critical
angle of x-ray total reflection”, Applied Physics Letters, 63,
269-271, (1993).
(22) 藤浪真紀, N. Chilton, “単色陽電子ビームによるイオン注入されたSiウエハーの表面欠陥解析”, 表面科学, 14, 254-259, (1993).
(23) 藤浪真紀, N. Chilton, 笠置泰男, 泉宏比古, “Si(OC2H5)4を用いて堆積したSiO2膜中の不純物水分の状態分析”, 表面科学, 14, 618-622, (1993).
(24) M.
Fujinami, N. Chilton, “Ion implantation induced defects in SiO2:
The applicability of the positron beam”, Applied Physics Letters, 62,
1131-1133, (1993).
(25) M.
Fujinami, N. Chilton, “Positron trap sites in the native oxide film
grown on a hydrogen-terminated silicon surface”, Applied Physics Letters, 63,
3458-3460, (1993).
(26) M.
Fujinami, N. Chilton, “A slow positron beam study of vacancy formation
in fluorine-implanted silicon”, Journal of Applied Physics, 73,
3242-3245, (1993).
(27) M.
Fujinami, N. Chilton, K. Ishii, Y. Ohki, “Study of defects in SiO2
films on Si(100) by a variable energy positron beam”, Journal of Applied
Physics, 74, 5406-5409, (1993).
(28) M.
Fujinami, N. Chilton, K. Ishii, Y. Ohki, “A positron beam study of
defects in SiO2”, Journal de Physique Ⅳ3, C4, 169-175, (1993).
(29) M.
Fujinami, N. Chilton, “Study on excimer laser induced defects in SiO2
films on Si by variable-energy positron annihilation spectroscopy”, Applied
Physics Letters, 64, 2806-2808, (1994).
(30) M.
Fujinami, N. Chilton, “A study of defects in SiO2 films on Si
by variable-energy positron annihilation sprctroscopy”, Material Science
Forum, 175-178, 157-160, (1995).
(31) M.
Hasegawa, M. Tabata, T. Miyamoto, Y. Nagashima, T. Hyodo, M. Fujinami,
S. Yamaguchi, “Positron and positronium in free volume in oxides: silica
glass and neutron-irradiated alumina”, Material Science Forum, 175-178,
269-278, (1995).
(32) M.
Fujinami, S. Hayashi, “Study of defects behavior in ion-implanted Si
wafers by slow positron annihilation sprctroscopy”, Material Science Forum,
196-201, 1165-1170, (1995).
(33) M.
Fujinami, “Oygen-related defects in Si studied by variable-energy
positron annihilation sprctroscopy”, Physical Review B, 53,
13047-13050, (1996).
(34) M.
Fujinami, A. Tsuge, K. Tanaka, “Characterization of defects in self-ion
implanted Si using positron annihilation spectroscopy and Rutherford
backscattering spectroscopy”, Journal of Applied Physics, 79,
9017-9021, (1996).
(35) M.
Hasegawa, M. Tabata, M. Fujinami, Y. Ito, H. Sunaga, S. Okada, S.
Yamaguchi, “Positron annihilation and ESR study of irradiation-induced
defects in silica gass”, Nuclear Instrumental Methods,Physical Research B, 116,
347-354, (1996).
(36) Y.
Ikematsu, T. Iwasaki, H. Harada, K. Tanaka, M. Fujinami, M. Hasebe, “Crystallographic
Anaysis of flow pattern defers in dislocated Czochralski silicon crystals”,
Material Reseach Society Symposium Proceedings, 442, 125-130, (1997).
(37) M.
Fujinami, “Oygen-related defects Positron interaction in Si”,
Material Science Forum, 225-257, 218-222, (1997).
(38) M.
Saneyasu, M. Hasegawa, Z. Tang, M. Tabata, M. Fujinami, Y. Ito, S.
Yamaguchi, “Positron trapping Defects in neutron-irradiated vitreous and
crystalline SiO2”, Material Science Forum, 225-257, 460-462, (1997).
(39) A.
C. Kruseman, H. Schut, M. Fujinami, A. van Veen, “Decomposition of
Doppler broadened annihilation spectra”, Material Science Forum, 225-257,
793-795, (1997).
(40) M.
Nishifuji, M. Fujinami, A. Ono, K. Chiba, “Levitation
melting/thermoconductometric method for determination of nitrogen in steel”,
Analytical Chemistry, 70, 2866-2869, (1998).
(41) Y.
Ikematsu, T. Miautani, K. Nakai, M. Fujinami, M. Hasebe, W. Ohashi, “Transmission
electron microscope observation of grown-in defects detected by bright-field
infrared laser interferometer in Czochralski silicon crystals”, Japanese
Journal of Applied Physics, 37, L196-L199, (1998).
(42) M.
Fujinami, R. Suzuki, T. Ohdaira, T. Mikado, “Thermal evolution of
defects in H-implanted Si Studied by monoenergetic positrons”, Physical
Review B, 58, 12559-12562, (1998).
(43) H.
Yui, M. Fujinami, T. Kitamori, T. Sawada, “Structural change of heavy
water by laser-induced plasma generation”, Chemical Physics Letters, 308,
437-440, (1999).
(44) A.C.
Kruseman, H. Schut, A. van Veen, M. Fujinami, “Oxygen implanted
silicon investigated by positron annihilation spectroscopy”, Nuclear
Instrummental Methods Physical Research B, 148, 294-299, (1999).
(45) M.
Fujinami, R. Suzuki, T. Ohdaira, T. Mikado, “Characterization of
H-related defects in H-implanted Si with slow positrons”, Applied Surface
Science, 149, 188-192, (1999).
(46) Y.
Uchiyama, M. Fujinami, T. Sawada, I. Tsuyumoto, “Observation of
dynamoic molecular behaveior in a phse transferr catalytic reaction at a
liquid/liquid interface by using the time resolved quasi-elastic laser
scattering method”, Journal of Physical Chemistry B, 104, 4699-4702,
(2000).
(47) Y.
Hirose, H. Yui, M. Fujinami, T. Sawada, “The Ultrafast transient lens
measurement of the photoisomerization process of an azobenzene derivative;
Contribution of solute-soluvent interactions”, Analytical Sciences, 17,
i107, (2001).
(48) H.
Yui, H. Fujiwara, M. Fujinami, T. Sawada, “Spectroscopic analysis of
transiently enhanced stimulated Raman scattering in OH stretching vibrational
region of water molecules”, Analytical Sciences, 17, i77, (2001).
(49) K.
Shibamoto, K. Katayama, M. Fujinami, T. Sawada, “Fundamental process
of surface enhanced Raman scattering detected with transient reflecting grating
spectrscopy”, Analytical Sciences, 17, i91, (2001).
(50) Y.
Hirose, H. Yui, M. Fujinami, T. Sawada, “Ultrafast refractive index
change induced by photoisomerization of an azobenzen deriveative: Contribution
of solvateion dynamics of solvent molecules”, Chemical Physics Letters, 341,
29-34, (2001).
(51) A.C.
Kruseman, A. van Veen, H. Schut, P.E. Mijnarends, M. Fujinami, “Buried
oxide and defects in oxygen implanted Si monitored by positron annihilation
spectroscopy”, Journal of Applied Physics, 90, 1179-1187, (2001).
(52) M.
Fujinami, T. Akahane, T. Sawada, “Defects in semiconductors”,
Materials Science Forum, 363-365, 52-55, (2001).
(53) T.
Akahane, M. Fujinami, T. Sawada, “Defect study on ion-implanted Si by
coincidence Doppler broadening measurement”, Applied Surface Science, 194,
116-119, (2002).
(54) K.
Shibamoto, K. Katayama, M. Fujinami, T. Sawada, “Fundamental process
of surface enhanced Raman scattering detected with transient reflecting grating
spectrscopy”, Review of Scientific Instrument, 74, 910-912, (2003).
(55) M.
Fujinami, H. Murakawa, T. Sawada, “Highly sensitive detection of
molecules at the liquid/liquid interface using total internal reflection -
optical beam deflection based on photothermal spectroscopy”, Review of
Scientific Instrument, 74, 352-354, (2003).
(56) M.
Fujinami, K. Toya, T. Sawada, “Development of photothermal near-field scanning
optical microscope (PT-NSOM)”, Review of Scientific Instrument, 74,
621-623, (2003).
(57) Y.
Hirose, H. Yui, M. Fujinami, T. Sawada, “Ultrafast dynamics of
aqueous solutions in size-controlled reverse micelles”, Review of
Scientific Instrument, 74, 898-890, (2003).
(58) M.
Fujinami, T. Akahane, T. Sawada, “Coincidence Doppler broadening
positron annihilation spectroscopy in defects of silicon and iron”,
Radiation Physics and Chemistry, 68, 631-634, (2003).
(59) M.
Fujinami, T. Miyagoe, T. Sawada, R. Suzuki, T. Ohdaira, T. Akahane, “Helium
ion implantation-induced defects in silicon probed with variable-energy
positrons”, Physical Review B, 68, 165332-1-6, (2003).
(60) M.
Fujinami, T. Miyagoe, T. Sawada, T. Akahane, “Improved depth profiling
of ion implantation-induced damage in silicon with slow positrons”, Journal
of Applied Physics, 94, 4382-4387, (2003).
(61) M.
Fujinami, T. Miyagoe, T. Sawada, R. Suzuki, T. Ohdaira and T. Akahane, “A
positron beam study of vacancy?impurity complexes in inert gas ion-implanted
silicon”, Physica B: Condensed Matter, 340-342, 724-728, (2003).
(62) J.
Nakajima, M. Fujinami, K. Oguma, “A Novel Separation and
Preconcentration Method for Traces of Manganese, Cobalt, Zinc and Cadmium Using
Coagulation of Colloidal Silica”, Analytical Sciences, 20,
1733-1736, (2004).
(63) Y.
Ikezoe, S. Ishizaki, H. Yui, M. Fujinami, T. Sawada, “Direct
Observation of Chemical Oscillation at a Water/Nitrobenzene Interface with a
Sodium-alkyl-sulfate System”, Analytical Sciences, 20, 435-440,
(2004).
(64) Y.
Ikezoe, S. Ishizaki, H. Yui, M. Fujinami, T. Sawada, “Chemical
Oscillation with Periodic Adsorption and Desorption of Surfactant Ions at a
Water/Nitrobenzene Interface”, Analytical Sciences, 20, 1509-1514,
(2004).
(65) T.
Morisaku, H. Yui, M. Iwazumi, Y. Ikezoe, M. Fujinami, T. Sawada, “Real-Time
Observation for the Enzymatic Reaction of Phospholipid Membrane: Application of
the Time-Resolved Quasi-Elastic Laser Scattering Method”, Analytical
Chemistry, 76, 2314-2320, (2004).
(66) Y.
Ikezoe, S. Ishizaki, T. Takahashi, H. Yui, M. Fujinami, T. Sawada, “Hydrodynamically
induced chemical oscillation at a water/nitrobenzene interface”, Journal of
Colloid and Interface Science, 275, 298-304, (2004).
(67) M.
Fujinami, T. Miyagoe, T. Sawada, R. Suzuki, T. Ohdaira, T. Akahane, “Depth
dependence of defects in ion-implanted Si probed by a positron beam”,
Mater. Sci. Forum, 445-446, 78-80, (2004).
(68) T.
Miyagoe, M. Fujinami, T. Sawada, R. Suzuki, T. Ohdaira, T. Akahane, “Positron
beam study of defects induced in Ar-implanted Si”, Mater. Sci. Forum, 445-446,
150-152, (2004).
(69) T. Akahane, S. Tadokoro, M. Fujinami, T. Sawada, “Observation of positron induced ion desorption”, Mater. Sci. Forum, 445-446, 370-374, (2004).
(70) M. Fujinami, T. Miyagoe, T. Sawada, R. Suzuki, T. Ohdaira, T. Akahane, “Identification of vacancy-oxygen complexes in oxygen implanted silicon probed with slow positrons”, Journal of Applied Physics, 95, 3404-3409, (2004).
(71) M. Kuramochi, K. Tomioka, M. Fujinami, K. Oguma, “Rapid determination of lead extracted by acetic acid from glazed ceramic surfaces by flow injection on-line preconcentrationand spectrophotometric detection”, Talanta, 68, 287-291, (2005)..
(72) H. Sakurai, J. Noro, A. Kawase, M. Fujinami and K. Oguma, “Digestion of Plastic Materials for the Determination of Toxic Metals with a Microwave Oven for Household Use”, Anal. Sci., 22, 225-228 (2006).
(73) H. Sakurai, N. Ebihara, E. Osawa, M. Takahashi, M. Fujinami and K. Oguma, “Adsorption Characteristics of a Nanodiamond for Oxoacid Anions and Their Application to the Selective Preconcentration of Tungstate in Water Samples”, Anal. Sci., 22, 357-362 (2006).
(74) M. Fujinami, S. Jinno, M. Fukuzumi, T. Kawaguchi, K. Oguma and T. Akahane, “Production of a Positron Microprobe Using a Transmission Remoderator”, Anal.Sci., 24, 73-79 (2008).
(75) N. Ebihara, H. Sakurai, M. Fujinami, K. Oguma and T. Uchida, “Oxygen-flask Combustion with Light Beam Ignition”, Anal. Sci., 24, 283 (2008).
総説・解説
(1) 氏平祐輔、藤浪真紀, メスバウアースペクトロメトリー, 耐火物, Vol.38, pp.707-712 (1986).
(2) 小林慶規、藤浪真紀, 陽電子ビーム利用分析法, ぶんせき, pp.35-42 (1991).
(3) 藤浪真紀, 単色陽電子ビームによるSiO2膜の欠陥解析, 誘電・絶縁材料研究会資料, DEI-93-171, pp.71-79 (1993).
(4) 藤浪真紀, 単色陽電子ビームによる表面層欠陥の評価表面技術, Vol.45, pp. 62-66 (1994).
(5) 藤浪真紀, 低速陽電子消滅法による表面層欠陥分析, 化学と工業, Vol.47, pp.1555-1557 (1994).
(6) 藤浪真紀, エネルギー可変陽電子消滅法によるSiO2/Si系半導体材料欠陥解析, まてりあ, Vol.35, pp.154-159 (1996).
(7) 藤浪真紀, 半導体中格子欠陥と陽電子消滅, 真空, Vol. 45, pp.827-832 (2002).
(8) 藤浪真紀, 陽電子消滅による欠陥化学状態分析, Isotope News, 12月号, pp.2-12 (2003).
(9) 藤浪真紀，陽電子消滅法による半導体中の格子欠陥研究, まてりあ, Vol.45, pp.276-282 (2006).
(10) 藤浪真紀，陽電子プローブによる局所分析, ぶんせき, pp.169-175 (2008).
特許
(1) 特願2002-361564，“表面微小領域質量分析装置”，藤浪真紀，澤田嗣郎 (2002).
(2) 特願2003-172836，“表面微小領域原子発光分析装置”，藤浪真紀，澤田嗣郎 (2003).
(3) 特願2007-150900，“低速陽電子輝度増強用透過型減速材の製造方法、低速陽電子輝度増強用透過型減速材、低速陽電子ビームの輝度増強方法、高輝度低速陽電子ビーム発生装置および陽電子顕微鏡”，藤浪眞紀，鈴木良一，大平俊行，大島永康 (2007).
競争的資金の獲得実績
科学研究費（研究代表者のみ）
平成11-12年度 基盤B 「固体中ナノ空間における高精度化学情報計測による原子空孔の挙動追跡」
平成12-13年度 基盤B 「光熱変換近接場光学走査型顕微鏡の開発」
平成12年度 萌芽 「光熱変換顕微鏡による液液界面計測手法の開発」
平成14-15年度 基盤B 「近接場光学顕微鏡レーザーアブレーションによるナノ領域の質量分析」
平成16-17年度 基盤B 「表面増強支援ナノ領域質量分析法」
平成16-17年度 萌芽 「陽電子消滅励起分子イオン化質量分析法」
平成16-17年度 特定領域 「ナノプラズマ創成とナノ空間表面分子質量分析法の融合研究」
平成18-19年度 基盤B 「ソフト界面二次元分子相関ダイナミクス解析手法の開発」
平成19-20年度 特定領域 「陽電子マイクロビームによる空孔二次元分布計測」
受託研究（研究代表者のみ）
平成16年度 日本原子力研究所 黎明研究 「陽電子消滅励起イオン化質量分析法の開発」
平成17-20年度 日本科学技術振興機構 先端計測分析技術・機器開発事業 「透過型陽電子顕微鏡」